Innoscience signs distribution agreement with Finepower offering European and Chinese customers expert design assistance – EEJournal

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July 19, 2022

Innoscience signs distribution agreement with Finepower offering European and Chinese customers expert design support

World’s Largest 8-inch GaN-on-Si Device Manufacturer Partners with Germany’s Innovation Center for Power Electronics

19e July 2022 – Innoscience Technology, a company founded to create a global energy ecosystem based on high-performance, low-cost gallium nitride-on-silicon (GaN-on-Si) power solutions, has signed a distribution agreement with Finepower , the engineering and distribution company specializing in power electronics applications with operations in Germany and China.

The agreement covers Europe, China and worldwide for specified customers. Dr. Denis Marcon, Managing Director of Innoscience Europe comments: “Finepower presents itself as the ‘Innovation Hub’ for power semiconductors and offers both engineering and distribution services. Therefore, we are sure that they will be an excellent partner for Innoscience, both to educate the market on the industry-leading performance and reliability offered by our InnoGaN solutions and to ensure a secure supply chain for customers.

Reiko Winkler, Managing Director of Finepower adds: “Finepower is already very experienced in working on customer applications using GaN. And we’re excited to expand our portfolio with high-voltage GaN devices by adding Innoscience – the world’s largest manufacturer of 8-inch GaN-on-Si devices – to our lineup. With a capacity of 10,000 8-inch wafers per month (WPM), which will increase to 70,000 WPM by 2025, Innoscience is ensuring that the world can start designing with GaN now, without delay. This is extremely stimulating for all markets.

About Innoscience

Innoscience is an Embedded Device Manufacturer (IDM) founded in December 2015 with core investment from CMBI, ARM, SK and CATL. With the development of new technologies, the electrical grid and power electronic systems around the world are undergoing a massive transformation. Our vision is to create an energy ecosystem with the most efficient and least expensive Gallium Nitride-on-Silicon (GaN-on-Si) power solutions. In November 2017, Innoscience established an 8-inch wafer mass production line for GaN-on-Si devices for the first time in Zhuhai. In order to meet the rapidly growing energy demand, Innoscience inaugurated a new facility in Suzhou in September 2020. As a leading GaN technology provider, Innoscience’s 1,400+ employees and 300+ experts in R&D are dedicated to providing high performance and reliability. GaN power devices which can be widely used in various applications including cloud computing, electric vehicles (EV) and automotive, portable devices, mobile phones, chargers and adapters. For more information, please visit http://www.innoscience.com.

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